BD14016S
Manufacturer:
On Semiconductor
Mfr.Part #:
BD14016S
Datasheet:
Description:
BJTs TO-126 Through Hole PNP 1.25 W Collector Base Voltage (VCBO):80 V Collector Emitter Voltage (VCEO):80 V Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -80 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Bulk |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | PNP |
| Voltage | 45 V |
| REACH SVHC | No SVHC |
| Weight | 0.761 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 15 A |
| Current Rating | -1.5 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 1.25 W |
| Power Dissipation | 1.25 W |
| Max Collector Current | 1.5 A |
| Collector Emitter Breakdown Voltage | 80 V |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 80 V |
| Collector Base Voltage (VCBO) | 80 V |
| Collector Emitter Saturation Voltage | -500 mV |
| Emitter Base Voltage (VEBO) | 5 V |
| hFE Min | 40 |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Max Cutoff Collector Current | 100 nA |
| Transistor Type | PNP |
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